Time-resolved measurement of free carrier absorption, diffusivity, and internal quantum efficiency in silicon
نویسندگان
چکیده
منابع مشابه
Design and Performance of an Erbium-Doped Silicon Waveguide Detector Operating at 1.5 m
A new concept for an infrared waveguide detector based on silicon is introduced. It is fabricated using silicon-on-insulator material, and consists of an erbium-doped p–n junction located in the core of a silicon ridge waveguide. The detection scheme relies on the optical absorption of 1.5m light by Er ions in the waveguide core, followed by electron–hole pair generation by the excited Er and s...
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